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TOSHIBA MOS MEMORY PRODUCT 1 MEGA BIT (131 ,072 WORD X 8 BIT) SILICON STACKED GATE MOS CMOS U.V. Erasable & Electrically Programmable Read Only Memory TC5710000-20, TC571 0000-25 TC571 0010-20, TC571 0010-25 IOESCRIPTIONj The TC57l000D/TC57l00lD is a 131,072 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The T.
with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns.
The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm.
IFEATURESI
• Peripheral circuit: CMOS
Memory cell
N-MOS
• Fast access Time
TC57l000D-20/T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC571001D-20 |
Toshiba |
SILICON STACKED GATE MOS |
|
| 2 | TC571001D |
Toshiba |
SILICON STACKED GATE MOS |
|
| 3 | TC571000D |
Toshiba |
SILICON STACKED GATE MOS |
|
| 4 | TC571000D-20 |
Toshiba |
SILICON STACKED GATE MOS |
|
| 5 | TC571000D-25 |
Toshiba |
SILICON STACKED GATE MOS |
|
| 6 | TC572502 |
Microchip Technology |
(TC572502/3002/3302) Line Regulator Controller |
|
| 7 | TC57256AD |
Toshiba |
CMOS ultraviolet light erasable and electrically programmable read only memory |
|
| 8 | TC57256AD-15 |
Toshiba |
CMOS ultraviolet light erasable and electrically programmable read only memory |
|
| 9 | TC57256AD-20 |
Toshiba |
CMOS ultraviolet light erasable and electrically programmable read only memory |
|
| 10 | TC57256D-20 |
Toshiba |
CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY |
|
| 11 | TC57256D-25 |
Toshiba |
CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY |
|
| 12 | TC573002 |
Microchip Technology |
(TC572502/3002/3302) Line Regulator Controller |
|