The TC55V1664J/FT is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable hJgtl speed operation. The TC55V1664J/FT features low power dissipation when the device is deselected using chip enable (CE), and has an outp.
low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. Byte access is supported by upper and lower byte controls.
The TC55V1664J/FT is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are LVTTL compatible.
The TC55V1664J/FT is available in a 400mil width, 44-pin plastic SOJ and thin small outline package (forward type) suitable for high density surface assembly.
Features
• Fast access time - TC55V1664J/FT -10 - TC55V1664J/FT -12 - TC55V1664J/FT -15
1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TC55V1664FT-12 |
Toshiba |
16-Bit CMOS SRAM | |
2 | TC55V1664FT-15 |
Toshiba |
16-Bit CMOS SRAM | |
3 | TC55V16648BFT-10 |
Toshiba |
16-Bit CMOS SRAM | |
4 | TC55V16648BFT-12 |
Toshiba |
16-Bit CMOS SRAM | |
5 | TC55V16648BFT-15 |
Toshiba |
16-Bit CMOS SRAM | |
6 | TC55V16648BJ-10 |
Toshiba |
16-Bit CMOS SRAM | |
7 | TC55V16648BJ-12 |
Toshiba |
16-Bit CMOS SRAM | |
8 | TC55V16648BJ-15 |
Toshiba |
16-Bit CMOS SRAM | |
9 | TC55V1664BFT |
Toshiba |
(TC55V1664BJ/BFT) 16-Bit CMOS SRAM | |
10 | TC55V1664BFT-8 |
Toshiba Semiconductor |
CMOS STATIC RAM | |
11 | TC55V1664BJ |
Toshiba |
(TC55V1664BJ/BFT) 16-Bit CMOS SRAM | |
12 | TC55V1664J |
Toshiba |
16-Bit CMOS SRAM |