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The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power .
with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 21lA at room temperature. The TC55257CPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257CPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are required. The TC55257CPL is offered in a standard dual-in-line 28-pin plastic package (0.6/0.3 inch w.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC55257CTRL-85 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 2 | TC55257CTRL-10 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 3 | TC55257CTRL-10L |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 4 | TC55257CTRL-70 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 5 | TC55257CTRL-70L |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 6 | TC55257CTRL |
Toshiba Semiconductor |
(TC55257xxx) Silicon Gate CMOS |
|
| 7 | TC55257CTRI |
Toshiba Semiconductor |
(TC55257xxx) Silicon Gate CMOS |
|
| 8 | TC55257CTRI-10 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 9 | TC55257CTRI-10L |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 10 | TC55257CTRI-85 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 11 | TC55257CTRI-85L |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 12 | TC55257CFI |
Toshiba Semiconductor |
(TC55257xxx) Silicon Gate CMOS |
|