The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from a single power supply of 2.7 - 5.5V. Refreshing is supported by a refresh (RF.
a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to a CS pin. The TC518129B-V is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TC518129BFTL-70 |
Toshiba |
CMOS Pseudo Static RAM | |
2 | TC518129BFTL-70L |
Toshiba |
CMOS Pseudo Static RAM | |
3 | TC518129BFTL-10 |
Toshiba |
CMOS Pseudo Static RAM | |
4 | TC518129BFTL-10L |
Toshiba |
CMOS Pseudo Static RAM | |
5 | TC518129BFTL-10V |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
6 | TC518129BFTL-80 |
Toshiba |
CMOS Pseudo Static RAM | |
7 | TC518129BFTL-80L |
Toshiba |
CMOS Pseudo Static RAM | |
8 | TC518129BFTL-80V |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
9 | TC518129BFL-10 |
Toshiba |
CMOS Pseudo Static RAM | |
10 | TC518129BFL-10L |
Toshiba |
CMOS Pseudo Static RAM | |
11 | TC518129BFL-10V |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
12 | TC518129BFL-70 |
Toshiba |
CMOS Pseudo Static RAM |