The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates from a single power supply of 3.135V - 5.5V Refreshing is supported by a refres.
a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129A-LV family, with the CE2 pin in the TC518128A-LV family changed to a CS pin. The TC518129A-LV is available in a 32-pin, 0.6 inch width plastic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TC518129AFWL-12 |
Toshiba |
CMOS Pseudo Static RAM | |
2 | TC518129AFWL-10 |
Toshiba |
CMOS Pseudo Static RAM | |
3 | TC518129AFWL-10LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
4 | TC518129AFWL-80 |
Toshiba |
CMOS Pseudo Static RAM | |
5 | TC518129AFWL-80LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
6 | TC518129AFW-10 |
Toshiba |
CMOS Pseudo Static RAM | |
7 | TC518129AFW-12 |
Toshiba |
CMOS Pseudo Static RAM | |
8 | TC518129AFW-80 |
Toshiba |
CMOS Pseudo Static RAM | |
9 | TC518129AFWI-10 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
10 | TC518129AF-10 |
Toshiba |
CMOS Pseudo Static RAM | |
11 | TC518129AF-12 |
Toshiba |
CMOS Pseudo Static RAM | |
12 | TC518129AF-80 |
Toshiba |
CMOS Pseudo Static RAM |