Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The TC511632FUFTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FUFTL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FUFTL operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH.
a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of WE thus simplifying the microprocessor interface.
The TC511632FUFTL is available in a 40-pin small outline plastic flat package and a 44-pin outline (40 actual pins) plastic thin small outline package (forward type).
Features
Pin Connection (Top View)
• Organization: 32,768 words .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC511632FTL-10 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 2 | TC511632FTL-85 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 3 | TC511632FL-10 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 4 | TC511632FL-70 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 5 | TC511632FL-85 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 6 | TC5116400BSJ |
Toshiba |
4194304 word x 4 Bit Dynamic Ram |
|
| 7 | TC5116400BSJ-60 |
Toshiba |
DRAM |
|
| 8 | TC5116400BSJ-70 |
Toshiba |
DRAM |
|
| 9 | TC5116400BST-60 |
Toshiba |
DRAM |
|
| 10 | TC5116400BST-70 |
Toshiba |
DRAM |
|
| 11 | TC5116400FT-60 |
Toshiba |
DRAM |
|
| 12 | TC5116400FT-70 |
Toshiba |
DRAM |
|