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LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us www.DataSheet4U.com High off state Impedance and low on state volta.
Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us www.DataSheet4U.com High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 SMC SMC A DIM. A B C B C D E MIN. 6.60 5.59 2.92 0.15 7.75 0.05 2.01 0.76 MAX. 7.11 6.22 3.18 0.31 8.13 0.20 2.62 1.52 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams G H E F D F G H All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/.
TC1100H - Lite-On
LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC110 |
Microchip |
PFM/PWM Step-Up DC/DC Controller |
|
| 2 | TC1101 |
Transcom |
Low Noise and Medium Power GaAs FETs |
|
| 3 | TC1102 |
Transcom |
Super Low Noise GaAs FETs |
|
| 4 | TC1102 |
Premo |
SMD TELECOIL 10.5X1.4X2MM |
|
| 5 | TC1107 |
Microchip |
300mA CMOS LDO |
|
| 6 | TC1108 |
Microchip |
300mA CMOS LDO |
|
| 7 | TC110G03 |
Toshiba |
CMOS Gate Array |
|
| 8 | TC110G05 |
Toshiba |
CMOS Gate Array |
|
| 9 | TC110G08 |
Toshiba |
CMOS Gate Array |
|
| 10 | TC110G11 |
Toshiba |
CMOS Gate Array |
|
| 11 | TC110G14 |
Toshiba |
CMOS Gate Array |
|
| 12 | TC110G17 |
Toshiba |
CMOS Gate Array |
|