TBC338 - Toshiba

TBC338 Silicon NPN Transistor

: TBC337 TBC338 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP COMPLEMENTS ARE TBC327 AND TBC328. FEATURES . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.

Features

. High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC337 TBC338 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TBC337 TBC338 Collector Current DC Peak Base Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL V (BR)CBO v (BR) CEO V (BR)EBO ic ICP IB PC Ti T stg RATING 50 30 45 25 5 500 1000 100 625 150 -65-150 .