Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TB100 5G TB101 TB102 TB104 TB106 TB108 TB1010 GGGGG G Unit Conditions 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 10 A TC = 95 °C Note2 IFSM VF IR Peak Forward Surge Curr.
High current capability
High case dielectric strength
High surge current capability
Idea for PCB application
RoHS Compliant
MP10
Mechanical Data
Case: Epoxy: Terminals: Polarity: Weight:
Molded plastic with Heatsink Meets UL 94V-0 flammability rating Lead solderable per MIL-STD-202 method 208 Marked on case 5.4 grams
Maximum Ratings & Electrical Characteristics (TAmbient=25ºC unless noted)
Symbol
VRRM VRMS VDC
IO(AV)
Description
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
TB100 5G
TB101 TB1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TB1010F |
Toshiba Semiconductor |
CR TIMER | |
2 | TB1010M |
TAITRON |
10A Bridge Rectifier | |
3 | TB101 |
Taitron Components |
Bridge Rectifiers | |
4 | TB1012F |
Toshiba Semiconductor |
CR TIMER | |
5 | TB101G |
TAITRON |
10A Glass Passivated Bridge Rectifier | |
6 | TB101M |
TAITRON |
10A Bridge Rectifier | |
7 | TB100 |
Nemco Electronics |
Radial Dipped Tantalum Capacitors | |
8 | TB100 |
NXP |
NPN power transistor | |
9 | TB100505B121 |
Tecstar |
MULTILAYER FERRITE CHIP BEADS | |
10 | TB100505B221 |
Tecstar |
MULTILAYER FERRITE CHIP BEADS | |
11 | TB100505B300 |
Tecstar |
MULTILAYER FERRITE CHIP BEADS | |
12 | TB100505B301 |
Tecstar |
MULTILAYER FERRITE CHIP BEADS |