TA1282N - KEC

TA1282N KTA1282N

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌComplementary to KTC3210. KTA1282 EPITAXIAL PLANAR PNP TRANSISTOR B C A MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range .

Features

ᴌComplementary to KTC3210. KTA1282 EPITAXIAL PLANAR PNP TRANSISTOR B C A MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -30 -30 -5 -2 2 625 150 -55ᴕ150 UNIT V V V A A mW ᴱ ᴱ L M C K E G D H F F 1 23 J N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 .