T835-600H - INCHANGE

T835-600H Thyristor

isc Thyristors INCHANGE Semiconductor T835-600H APPLICATIONS ·With TO-251(IPAK) package. ·Be suitable for general purpose AC switching,they can be used as an ON/OFF function in applications. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-sta.

Features

IGT is guaranted at 5% of IGT VD = 12 V;RL=30Ω max）Quadrant(I - II - III) VGT Gate-trigger voltage Quadrant (I - II - III) VD = 12 V;RL=30Ω Rth(j-c) Thermal resistance Junction to case Rth(j-a) Thermal resistance Junction to case MIN MAX UNIT 5 μA 1 mA 5 μA 1 mA 1.55 V 35 mA 1.3 V 1.6 ℃/W 100 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor T835-600H NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a.