T1800GB45A - IXYS

T1800GB45A Insulated Gate Bi-Polar Transistor

Date:- 10 Aug, 2016 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RA.

Features

40 to +125 -40 to +125 UNITS A A A A kA kA kW A/µs °C °C Data Sheet T1800GB45A Issue 2 Page 1 of 8 August, 2016 Characteristics IGBT Characteristics PARAMETER VCE(sat) Collector
  – emitter saturation voltage VT0 rT VGE(TH) ICES IGES Cies td(on) tr(V) Qg(on) Eon td(off) tf(I) Qg(off) Eoff Threshold voltage Slope resistance Gate threshold voltage Collector
  – emitter cut-off current Gate leakage current Input capacitance Turn-on delay time Rise time Turn-on gate charge Turn-on energy Turn-off delay time Fall time Turn-off gate charge Turn-off energy ISC Short circuit current Insulated .