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T08xxH series triacs of high junction temperature with high dv/dt rate with strong resistance to electromagnetic interference provide high ability to withstand the shock loading of large current. They are especially recommended for use on inductive load and high environment temperature condition. T08xxH-xxA provides insulation voltage rated at 2500V RMS an.
123 TO-220A Insulated 1 23 TO-220F Insulated 1 2 3 TO-220B Non-Insulated 2 13 TO-263 Symbol IT(RMS) VDRM /VRRM Tjmax Value 8 600 and 800 150 Unit A V ℃ T2(2) T1(1) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage junction temperature range Tstg Operating junction temperature range Repetitive peak off-state voltage(Tj=25℃) Repetitive peak.
T0835H - JILIN SINO
1 MT1 2 MT2 G TO-220S Insulated TO-220S-B Non-Insulated FEATURES ， ， RoHS Glass-passivated m.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | T0800EB45G |
IXYS |
Insulated Gate Bi-Polar Transistor |
|
| 2 | T0800TB45E |
IXYS |
Insulated Gate Bi-Polar Transistor |
|
| 3 | T0805BH |
Tag Semiconductors |
(T0805xH) Triacs |
|
| 4 | T0805BM |
Tag Semiconductors |
(T0805xM) Triacs |
|
| 5 | T0805BS |
Tag Semiconductors |
(T0805xS) Triacs |
|
| 6 | T0805DH |
ST Microelectronics |
(T0805xH / T0809xH) Sensitive Gate Triacs |
|
| 7 | T0805DH |
Tag Semiconductors |
(T0805xH) Triacs |
|
| 8 | T0805DM |
Tag Semiconductors |
(T0805xM) Triacs |
|
| 9 | T0805DS |
Tag Semiconductors |
(T0805xS) Triacs |
|
| 10 | T0805MH |
ST Microelectronics |
(T0805xH / T0809xH) Sensitive Gate Triacs |
|
| 11 | T0805MH |
Tag Semiconductors |
(T0805xH) Triacs |
|
| 12 | T0805MM |
Tag Semiconductors |
(T0805xM) Triacs |
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