SiRA60DDP - Vishay

SiRA60DDP N-Channel MOSFET

www.vishay.com SiRA60DDP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.00090 0.00135 39.1 241 a Single FEATURES • TrenchFET® Gen IV power .

Features

• TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D
• Synchronous rectification
• High power density DC/DC
• VRMs and embedded DC/DC G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiRA60DDP-T1-UE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed drain cu.