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www.vishay.com SiHK105N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode Drain tab Gate pin 1 Driver source pin 2 Source pin 3 to 8 N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 51 16 8 Single 0.090 FEATURES • 4th generation E series technology .
• 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SiHK105N60E |
Vishay |
Power MOSFET |
|
| 2 | SiHK100N65E |
Vishay |
Power MOSFET |
|
| 3 | SiHK155N60E |
Vishay |
Power MOSFET |
|
| 4 | SiHK045N60E |
Vishay |
Power MOSFET |
|
| 5 | SiHK065N60E |
Vishay |
Power MOSFET |
|
| 6 | SiHK085N60EF |
Vishay |
Power MOSFET |
|
| 7 | SiHA100N60E |
Vishay |
Power MOSFET |
|
| 8 | SiHA11N80AE |
Vishay |
Power MOSFET |
|
| 9 | SiHA11N80E |
Vishay |
Power MOSFET |
|
| 10 | SiHA11N80E |
INCHANGE |
N-Channel MOSFET |
|
| 11 | SiHA12N60E |
Vishay |
Power MOSFET |
|
| 12 | SiHA14N60E |
Vishay |
Power MOSFET |
|