Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of application.
• Advanced process technology
• Fully avalanche rated
• Surface-mount (IRFR9214, SiHFR9214)
• Straight lead (IRFU9214, SiHFU9214)
• P-channel
• Fast switching
Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable devic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiHFR9210 |
Vishay Siliconix |
Power MOSFET | |
2 | SiHFR9220 |
Vishay Siliconix |
Power MOSFET | |
3 | SiHFR9010 |
Vishay |
Power MOSFET | |
4 | SiHFR9014 |
Vishay Siliconix |
Power MOSFET | |
5 | SiHFR9020 |
Vishay Siliconix |
Power MOSFET | |
6 | SiHFR9022 |
Vishay Siliconix |
Power MOSFET | |
7 | SiHFR9024 |
Vishay Siliconix |
Power MOSFET | |
8 | SiHFR9110 |
Vishay Siliconix |
Power MOSFET | |
9 | SiHFR9120 |
Vishay Siliconix |
Power MOSFET | |
10 | SiHFR9310 |
Vishay Siliconix |
Power MOSFET | |
11 | SiHFR010 |
Vishay |
Power MOSFET | |
12 | SiHFR014 |
Vishay Siliconix |
Power MOSFET |