SiHFR1N60A - Vishay Siliconix

SiHFR1N60A Power MOSFET

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 14 2.7 8.1 Single 7.0 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement.

Features

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction TYPICAL SMPS TOPOLOGIES
• Low Power Single Transistor Flyback ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR1N60A-GE3 Lead (Pb)-free IRFR1N60APbF SiHFR1N60A-E3 DPAK (TO-252) SiHFR1.