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www.vishay.com SiHB100N60E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 50 13 10 Single 0.086 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective.
• 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SiHB100N65E |
Vishay |
Power MOSFET |
|
| 2 | SiHB11N80E |
Vishay |
Power MOSFET |
|
| 3 | SiHB125N65E |
Vishay |
Power MOSFET |
|
| 4 | SIHB12N50C |
Vishay Siliconix |
Power MOSFET |
|
| 5 | SiHB12N60E |
Vishay |
Power MOSFET |
|
| 6 | SiHB12N65E |
Vishay |
Power MOSFET |
|
| 7 | SIHB16N50C |
Vishay Siliconix |
Power MOSFET |
|
| 8 | SiHB17N80AE |
Vishay |
Power MOSFET |
|
| 9 | SiHB065N60E |
Vishay |
Power MOSFET |
|
| 10 | SiHB085N60EF |
Vishay |
Power MOSFET |
|
| 11 | SiHB20N50E |
Vishay |
E Series Power MOSFET |
|
| 12 | SiHB21N60EF |
Vishay |
Power MOSFET |
|