Si8824EDB - Vishay

Si8824EDB N-Channel 20V (D-S) MOSFET

www.vishay.com Si8824EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.075 at VGS = 4.5 V 0.082 at VGS = 2.5 V 20 0.090 at VGS = 1.8 V 0.125 at VGS = 1.5 V 0.175 at VGS = 1.2 V ID (A) a 2.9 2.7 2.6 2.2 1.5 Qg (TYP.) 2.7 nC MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Side Vie.

Features

• TrenchFET® power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.357 mm height
• Typical ESD protection 2000 V (HBM)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Ultraportable and wearable devices
• Load switch with low voltage drop
• Load switch for 1.2 V, 1.5 V, and 1.8 V power lines G
• Small signal and high speed switching D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMET.