Si7218DN - Vishay

Si7218DN Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Si7218DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.025 at VGS = 10 V 30 0.033 at VGS = 4.5 V ID (A) 24 21 Qg (Typ.) 5 nC PowerPAK® 1212-8 3.30 mm S1 1 G1 2 3.30 mm S2 3 G2 4 D1 8 D1 7 D2 6 D2 5 Bottom View Ordering Information: Si7218DN-T1-E3 (Lead (Pb)-free) Si7218DN-T1-GE3 (Lead (Pb)-free and Ha.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET APPLICATIONS
• Synchronous Rectification
• Notebook System Power
• POL D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power.