Si5411EDU - Vishay

Si5411EDU P-Channel MOSFET

www.vishay.com Si5411EDU Vishay Siliconix P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) 0.0082 at VGS = - 4.5 V 0.0094 at VGS = - 3.7 V 0.0117 at VGS = - 2.5 V 0.0206 at VGS = - 1.8 V ID (A) - 25a - 25a - 25a - 15 PowerPAK ChipFET Single Qg (Typ.) 43 nC FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® C.

Features

• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® ChipFET Package - Small Footprint Area - Low On-Resistance
• 100 % Rg and UIS Tested
• Typical ESD Protection: 5000 V (HBM)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 2 D3 DD 4 8D 7D 6S 5 D G S 1.9 mm APPLICATIONS
• Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Battery Switch - Load Switch - Power Management G Marking Code S Bottom View Ordering Information: Si5411EDU-T1-GE3 (Lead (Pb)-free and Halogen-free) LB XXX Lot Traceability and Date Cod.