Si4730EY - Vishay

Si4730EY Current Sensing MOSFET

New Product Si4730EY Vishay Siliconix Current Sensing MOSFET, N-Channel 30-V (D-S) PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.015 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) 11.7 10.1 SENSE KELVIN S G 1 2 3 4 SO-8 Top View 8D 7D 6D 5D D G SENSE KELVIN N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 1.

Features

ady State Symbol RthJA RthJF Typical 35 77 18 Maximum 42 90 22 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 Si4730EY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS.