of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Po.
• Low Clamping Voltage
• Stand Off Voltage 3 V
• Low Leakage < 1 mA @ 3 V
• SC−88A Package Allows Four Separate Unidirectional
Configurations
• IEC1000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• Pb−Free Package is Available
*
Mechanical Characteristics:
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
*For add.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SZM-01T-P0.7 |
JST |
ZL Connector | |
2 | SZM-2066Z |
Sirenza Microdevices |
2.4-2.7GHz 2W Power Amplifier | |
3 | SZM-2066Z |
RF Micro Devices |
2W POWER AMPLIFIER | |
4 | SZM-2166Z |
Sirenza Microdevices |
2.3-2.7GHz 2W Power Amplifier | |
5 | SZM-2166Z |
RF Micro Devices |
2W POWER AMPLIFIER | |
6 | SZM-3066Z |
Sirenza |
2W Power AMplifier | |
7 | SZM-3066Z |
RF Micro Devices |
2W POWER AMPLIFIER | |
8 | SZM-3166Z |
SIRENZA MICRODEVICES |
3.3-3.6GHz 2W Power Amplifier | |
9 | SZM-3166Z |
RF Micro Devices |
2W POWER AMPLIFIER | |
10 | SZM-41T-P0.7 |
JST |
ZL Connector | |
11 | SZM-5066Z |
RF Micro Devices |
HIGH POWER LINEAR POWER AMPLIFIER | |
12 | SZMD03C |
SeCoS |
Transient Voltage Suppressors |