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of survivability specs. Semiconductor Components Industries, LLC, 2013 1 February, 2024 − Rev. 3 Publication Order Number: ESD9R3.3S/D ESD9R3.3S, SZESD9R3.3S ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maxi.
Ultra−Low Leakage < 1 nA
Ultra−Low Capacitance 0.5 pF
Low Clamping Voltage
Small Body Outline Dimensions:
0.039 x 0.024 (1.00 mm x 0.60 mm)
Low Body Height: 0.016 (0.4 mm)
Stand−off Voltage: 3.3 V
Response Time < 1.0 ns
IEC61000−4−2 Level 4 ESD Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
This is a Pb−Free and Halogen−Free Device
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SZESD9B |
ON Semiconductor |
ESD Protection Diode |
|
| 2 | SZESD1014 |
ON Semiconductor |
Low Capacitance ESD Protection Array |
|
| 3 | SZESD1L001 |
ON Semiconductor |
ESD Protection Diode |
|
| 4 | SZESD5B5.0S |
ON Semiconductor |
ESD Protection Diode |
|
| 5 | SZESD5Z2.5T1G |
ON Semiconductor |
ESD Protection Diode |
|
| 6 | SZESD7002 |
ON Semiconductor |
ESD Protection Diode |
|
| 7 | SZESD7004 |
ON Semiconductor |
SD Protection Diode |
|
| 8 | SZESD7008 |
ON Semiconductor |
ESD Protection Diodes |
|
| 9 | SZESD7016 |
ON Semiconductor |
ESD Protection Diode |
|
| 10 | SZESD7102 |
ON Semiconductor |
ESD Protection Diodes |
|
| 11 | SZESD7181 |
ON Semiconductor |
ESD Protection Diode |
|
| 12 | SZESD7205 |
ON Semiconductor |
ESD Protection Diodes |
|