SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitabl.
12A,800V, RDS(on)(typ.)=0.37@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L NOMENCLATURE Silan DPMOS Code of DWell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A N denotes N Channel SVSXNXXXDX Process breakdown logo default: first generation process D2: second generation process; D3: third generation process Packageinformation.Examp:F:TO-220F. Nomin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SVS12N80F |
Silan Microelectronics |
800V DP MOS POWER TRANSISTOR | |
2 | SVS12N80FJ |
Silan Microelectronics |
800V DP MOS POWER TRANSISTOR | |
3 | SVS12N80FJH |
Silan Microelectronics |
800V DP MOS POWER TRANSISTOR | |
4 | SVS12N80PN |
Silan Microelectronics |
800V DP MOS POWER TRANSISTOR | |
5 | SVS11N60FD2 |
Silan Microelectronics |
600V DP MOS POWER TRANSISTOR | |
6 | SVS11N60FJD2 |
Silan Microelectronics |
600V DP MOS POWER TRANSISTOR | |
7 | SVS11N60KD2 |
Silan Microelectronics |
600V DP MOS POWER TRANSISTOR | |
8 | SVS11N60SD2 |
Silan Microelectronics |
600V DP MOS POWER TRANSISTOR | |
9 | SVS11N60TD2 |
Silan Microelectronics |
600V DP MOS POWER TRANSISTOR | |
10 | SVS11N65F |
Silan Microelectronics |
TRANSISTOR | |
11 | SVS11N65K |
Silan Microelectronics |
TRANSISTOR | |
12 | SVS11N65T |
Silan Microelectronics |
TRANSISTOR |