SVF3878AP7 - Silan Microelectronics

SVF3878AP7 900V N-CHANNEL MOSFET

SVF3878AP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche a.

Features

 9A, 900V, RDS(on) (typ.)=1. 0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2. Drain 1. Gate 3. Source 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF3878P7 Package TO-247-3L Marking 3878A Hazardous Substance Control Pb free Packing Tube ABSOLUTE MAXIMUM RATINGS (unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation (TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temp.