SUU50N10-18P - Vishay Siliconix

SUU50N10-18P N-Channel MOSFET

www.DataSheet4U.net New Product SUU50N10-18P Vishay Siliconix N-Channel 100-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0185 at VGS = 10 V ID (A)a 50 Qg (Typ.) 48 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS TO-251 • Primary Side Switch • Isolated DC/DC Converter D Drain.

Features

• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested RoHS COMPLIANT APPLICATIONS TO-251
• Primary Side Switch
• Isolated DC/DC Converter D Drain Connected to Drain-Tab G D S G Top View Ordering Information: SUU50N10-18P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C Symbol VDS VGS Limit 100 ± 20 50a 39 8.2b 5.8b 100 50a 2.0b 45 101 136.4 68.2 3.0b 1.5.