SUR50N03-06P - Vishay Siliconix

SUR50N03-06P N-Channel MOSFET

www.DataSheet4U.com SUR50N03-06P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V ID (A)b 84b 59b D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Co.

Features

PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V ID (A)b 84b 59b D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters − Desktop CPU Core D Synchronous Rectifiers TO-252 Reverse Lead DPAK D Drain Connected to Tab G D S G Top View Ordering Information: SUR50N03-06P—E3 SUR50N03-06P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TA = 2.