SUD40N10-25 - Vishay

SUD40N10-25 N-Channel MOSFET

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.025 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A) 40 38 FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested Available RoHS* COMPLIANT TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD40.

Features

• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• 100 % Rg Tested Available RoHS
* COMPLIANT TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD40N10-25 SUD40N10-25-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation Operating Junction and Storage Temperatur.