STWA20N95K5 - STMicroelectronics

STWA20N95K5 N-CHANNEL MOSFET

This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high effi.

Features

3 2 1 TO-247 long leads Figure 1. Internal schematic diagram D(2) G(1) Order codes VDSS RDS(on) max ID PW STWA20N95K5 950 V 0.330 Ω 17.5 A 250 W
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate char.