STW12NK80Z - ST Microelectronics

STW12NK80Z N-CHANNEL MOSFET

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistanc.

Features

Type VDSS (@Tjmax) RDS(on) ID PW STB12NK80Z STF12NK80Z STP12NK80Z STW12NK80Z 800V 800V 800V 800V <0.75Ω 10.5 A 190W <0.75Ω 10.5 A 40W <0.75Ω 10.5 A 190W <0.75Ω 10.5 A 190W
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing reliability Applications
■ Switching applications TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 TO-247 Figure 1. Internal schematic diagram D(2,TAB) Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroe.