STU612D - SamHop

STU612D Dual Enhancement Mode Field Effect Transistor

Green Product STU612D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 60V PRODUCT SUMMARY (P-Channel) V DSS -60V ID 8.6A R DS(ON) (m Ω) Max 76 @ VGS=10V ID -7.3A R DS(ON) (m Ω) Max 110 @ VGS=-10V 145 @ VGS=-4.5V 90 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G.

Features

ange without notice. Mar,05,2009 1 www.samhop.com.tw STU612D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 1.6 60 70 21 VDS=VGS , ID=250uA VGS=10V , ID=8.6A VGS=4.5V , ID=8A VDS=5V .