STU412S - SamHop Microelectronics

STU412S N-Channel Logic Level Enhancement Mode Field Effect Transistor

STU/D412S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ID 22A R DS(ON) (m Ω) Max 26 @ VGS=10V 40 @ VGS=4.5V ESD Protected. D D G S G D G S STU SERIES TO-252AA(D-P.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ID 22A R DS(ON) (m Ω) Max 26 @ VGS=10V 40 @ VGS=4.5V ESD Protected. D D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage TA=25 °C a Drain Current-Continuous TA=70 °C -Pulsed b Avalanche Energy c Limit 40 ±20 22 17.5 80 10 25 16 -55 to 150 Units V V A A A mJ W W °C Maximum Power Dissipation a TA=25 °C TA=70 °C Operating J.