STU/D17L01Green Product Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max -100V -17A 81 @ VGS=10V 94 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD .
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Sigle Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Jun.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET | |
2 | STU102S |
SamHop Microelectronics |
N-Channel MOSFET | |
3 | STU1030PL |
SamHop Microelectronics |
P-Channel Enhancement Mode MOSFET | |
4 | STU10L01 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | STU10N10 |
SamHop Microelectronics |
N-Channel MOSFET | |
6 | STU10N20 |
SamHop Microelectronics |
N-Channel MOSFET | |
7 | STU10N25 |
SamHop Microelectronics |
N-Channel MOSFET | |
8 | STU10N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STU10NA50 |
ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor | |
10 | STU10NB80 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STU10NC70Z |
ST Microelectronics |
N-Channel MOSFET | |
12 | STU10NC70ZI |
ST Microelectronics |
N-Channel MOSFET |