S amHop Microelectronics C orp. h P -C hannel E S nhancement Mode MOS FE T a t a P R ODUC T S UMMAR Y D . R V w w I w DS S D t e e 4U m o .c S T U/D1530P L P reliminary Mar.28 2004 F E AT UR E S DS (ON) ( m W ) Max S uper high dense cell design for low R DS (ON ). -30V -20A 45 @ V G S = -10V 60 @ V G S = -4.5V R ugged and reliable. TO-252 and TO.
n-to-Ambient 1 R JC R JA w w w .D at3 h S a t e e W U 4 . m o c C C /W C /W 50 S T U/D1530P L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.8A V GS = -4.5V, ID = -2.0A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5.8A Min Typ C Max Unit -30 -1 100 -1 -1.5 -2.5 35 50 -20 8 809 174 101 45 V uA nA V m-ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Ze.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU150N3LLH6 |
STMicroelectronics |
N-channel MOSFET | |
2 | STU1553 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | STU1554 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | STU15L01 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | STU15N20 |
SamHop Microelectronics |
N-Channel MOSFET | |
6 | STU100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET | |
7 | STU102S |
SamHop Microelectronics |
N-Channel MOSFET | |
8 | STU1030PL |
SamHop Microelectronics |
P-Channel Enhancement Mode MOSFET | |
9 | STU10L01 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | STU10N10 |
SamHop Microelectronics |
N-Channel MOSFET | |
11 | STU10N20 |
SamHop Microelectronics |
N-Channel MOSFET | |
12 | STU10N25 |
SamHop Microelectronics |
N-Channel MOSFET |