Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status lin.
3 12 TO-220FP
TAB
1 23 I2PAK
TAB
TO-220
1 23
3 12
IPAK
Order codes
VDS
RDS(on) max.
STF13NM60N
STI13NM60N STP13NM60N
600 V
360 mΩ
STU13NM60N
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
ID 11 A
D(2, TAB)
Applications
• Switching applications
G(1) S(3)
NG1D2TS3
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate char.
STU13NM60N - INCHANGE
Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta.
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