The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM V(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS voltage Average forward current Tl = 85°C Tl .
s s 1A 1200 V 175 °C 1.65 V s s s Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH112 DESCRIPTION The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM V(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS voltage Average forward current Tl = 85°C Tl = 115°C Tl = 125°C IFSM Forward surge c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STTH110 |
ST Microelectronics |
high efficiency ultrafast diode | |
2 | STTH110-Y |
STMicroelectronics |
Automotive high voltage ultrafast rectifier | |
3 | STTH110A |
ST Microelectronics |
high efficiency ultrafast diode | |
4 | STTH112-Y |
STMicroelectronics |
Automotive high voltage ultrafast rectifier | |
5 | STTH112A |
ST Microelectronics |
HIGH VOLTAGE ULTRAFAST RECTIFIER | |
6 | STTH112U |
ST Microelectronics |
HIGH VOLTAGE ULTRAFAST RECTIFIER | |
7 | STTH10002 |
STMicroelectronics |
Ultrafast recovery diode | |
8 | STTH1002C |
ST Microelectronics |
HIGH EFFICIENCY ULTRAFAST DIODE | |
9 | STTH1002C-Y |
STMicroelectronics |
Automotive high efficiency ultrafast diode | |
10 | STTH1002CB |
INCHANGE |
Ultrafast Rectifier | |
11 | STTH1003S |
STMicroelectronics |
High efficiency rectifier | |
12 | STTH1003S-Y |
STMicroelectronics |
Automotive 10A high efficiency ultrafast diode |