STT600 - SamHop Microelectronics

STT600 N-Channel MOSFET

Green Product STT600 Ver 3.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 90V ID 1.4A R DS(ON) (m Ω) Max 600 @ VGS=10V 708 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SO T - 223 ABSOLU.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SO T - 223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d ae Limit 90 ±20 TA=25°C TA=70°C 1.4 1.12 9.3 0.49 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-t.