The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
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High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed
Applications
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Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converters
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SOT-32FP
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STT13005 |
ST Microelectronics |
High voltage fast-switching NPN power transistor | |
2 | STT13005D |
ST Microelectronics |
High voltage fast-switching NPN power transistor | |
3 | STT130 |
Sirectifier Semiconductors |
Thyristor-Thyristor Modules | |
4 | STT100 |
Sirectifier Semiconductors |
Thyristor-Thyristor Modules | |
5 | STT100 |
SamHop Microelectronics |
N-Channel MOSFET | |
6 | STT10L01 |
SamHop Microelectronics |
N-Channel MOSFET | |
7 | STT116 |
Sirectifier Semiconductors |
Thyristor-Thyristor Modules | |
8 | sTT1400N16P55 |
Infineon |
Soft starter | |
9 | sTT1400N18P55 |
Infineon |
Soft starter | |
10 | STT165 |
Sirectifier |
Thyristor Modules | |
11 | STT18 |
Sirectifier Semiconductors |
Thyristor-Thyristor Modules | |
12 | STT181 |
Sirectifier |
Thyristor Modules |