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STQ2HNK60ZR-AP - STMicroelectronics

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STQ2HNK60ZR-AP N-channel Power MOSFET

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status .

Features

Order codes VDS STQ2HNK60ZR-AP 600 V
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected RDS(on) max. 4.8 Ω ID 500 mA Applications
• Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STQ2HNK60ZR.

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