STPSC6C065-Y - STMicroelectronics

STPSC6C065-Y Automotive 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior i.

Features

 AEC-Q101 qualified
 No or negligible reverse recovery
 Switching behavior independent of temperature
 Dedicated to PFC applications
 High forward surge capability
 PPAP capable
 ECOPACK®2 compliant component Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive t.