STP20NM65N - STMicroelectronics

STP20NM65N N-channel Power MOSFET

) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. This revolutionary Power MOSFET u associates a new vertical structure to the d company’s strip layout to yield one of the world’s ro lowest on-resistance and gate charge. It is P therefore suitable for the most demanding high lete efficiency converter.

Features

Order codes ) STP20NM65N t(s STF20NM65N VDSS @Tjmax RDS(on) max. 710 V 0.270 Ω ID 15 A uc
■ 100 % avalanche tested rod
■ Low input capacitance and gate charge P
■ Low gate input resistance lete Application so
■ Switching applications Ob Description ) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. This revolutionary Power MOSFET u associates a new vertical structure to the d company’s strip layout to yield one of the world’s ro lowest on-resistance and gate charge. It is P therefore suitable for the most demanding high lete eff.