STL60N32N3LL - ST Microelectronics

STL60N32N3LL Power MOSFETs

This product utilizes latest generations of design rules of ST’s proprietary STripFET™ V and STripFET™ VI DeepGATE technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.     3 1 $     3 $ 3 $ 1.

Features

Type STL60N32N3LL
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■ VDSS Q1 Q2 30 V 30 V RDS(on) ID < 0.012 Ω 12 A < 0.008 Ω 15 A RDS(on)
* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™5x6 asymmetrical double island Application
■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes latest generations of design rules of ST’s proprietary STripFET™ V and STripFET™ VI DeepGATE technology. The lowest available RDS(on)
*Qg, in this chip scale package, makes this device suitable for t.