STK22N06 - ST Microelectronics

STK22N06 N-Channel Transistor

STK22N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK22N06 s s s s s s s s V DSS 60 V R DS( on) < 0.065 Ω ID 22 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1.

Features

. Operating Junction Temperature o o Value 60 60 ± 20 22 15 88 65 0.43 -65 to 175 175 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area May 1993 1/7 STK22N06 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.31 80 0.7 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single P.