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S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G4S123DTAB_LFPAK Product status link STK130N4LF7AG Product summary Order code STK130N4LF7AG Markin.
Order code STK130N4LF7AG
V DS 40 V
RDS(on) max. 3.0 mΩ
• AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
ID 100 A
G(4)
Description
S(1, 2, 3)
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
G4S123DTAB_LFPAK
Product status link STK130N4LF7AG
P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STK13003 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 2 | STK1365 |
Syntek |
USB 2.0 DSC/DV Camera Controller |
|
| 3 | STK103 |
SamHop Microelectronics |
N-Channel MOSFET |
|
| 4 | STK1030 |
ETC |
AF Power Amplifier Output Stage |
|
| 5 | STK1030 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |
|
| 6 | STK1035 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |
|
| 7 | STK1039 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |
|
| 8 | STK1040 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |
|
| 9 | STK1045 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |
|
| 10 | STK1049 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |
|
| 11 | STK1050 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |
|
| 12 | STK1050II |
Sanyo Semicon Device |
Thick Film Hybrid Integrated Circuit 50W min AF Power Amp Output Stage With Built-in Emitter Resistance |
|