This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight.
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
G (1) Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and swi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGW30H60DF |
STMicroelectronics |
30A high speed trench gate field-stop IGBT | |
2 | STGW30H60DFB |
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30A high speed HB series IGBT | |
3 | STGW30H65FB |
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IGBT | |
4 | STGW30M65DF2 |
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Trench gate field-stop IGBT | |
5 | STGW30N120KD |
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short circuit rugged IGBT | |
6 | STGW30N90D |
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IGBT | |
7 | STGW30NB60H |
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N-CHANNEL IGBT | |
8 | STGW30NB60HD |
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N-CHANNEL IGBT | |
9 | STGW30NC120HD |
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N-CHANNEL IGBT | |
10 | STGW30NC60VD |
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fast IGBT | |
11 | STGW30NC60W |
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ultra fast IGBT | |
12 | STGW30NC60WD |
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N-CHANNEL IGBT |