STGHU30M65DF2AG - STMicroelectronics

STGHU30M65DF2AG Automotive-grade trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the.

Features

TAB 7 1 HU3PAK C(TAB)
• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• 6 μs of minimum short-circuit withstand time
• VCE(sat) = 1.6 V (typ.) @ IC = 30 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast-recovery antiparallel diode
• Excellent switching performance thanks to the extra driving kelvin pin Applications G(1) K(2) E(3,4,5,6,7)
• Automotive motor control
• e-compressor
• Industrial motor control
• Power supplies and converters K2G1CTABE34567 Description This device is an IGBT developed using an advance.