Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency applications. Figure 1. Internal schematic diagram Applications ■ ■ ■ ■ ■ Very high frequency invert.
Type STGE50NC60WD
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VCES 600V
VCE(sat) (Max) IC @25°C @100°C 2.5V 50A
High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency applications. Figure 1. Internal schematic diagram
Applications
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Very high fre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGE50NC60VD |
STMicroelectronics |
N-channel 50A - 600V - ISOTOP Very fast PowerMESTM IGBT | |
2 | STGE50NB60HD |
ST Microelectronics |
N-CHANNEL IGBT | |
3 | STGE200NB60S |
ST Microelectronics |
N-CHANNEL IGBT | |
4 | STG1 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STG1218 |
STMicroelectronics |
a quad channel analog switch | |
6 | STG15M120F3D7 |
STMicroelectronics |
IGBT | |
7 | STG15M120F3D8 |
STMicroelectronics |
IGBT | |
8 | STG200G65FD8AG |
STMicroelectronics |
IGBT | |
9 | STG200M65F2D8AG |
STMicroelectronics |
IGBT | |
10 | STG2017 |
SamHop Microelectronics |
Dual N-Channel FET | |
11 | STG2454 |
SamHop Microelectronics |
Dual N-Channel FET | |
12 | STG2507 |
SamHop Microelectronics |
Dual P-Channel FET |