du - O The STG6384 is a high-speed CMOS low voltage ro ) dual analog SPST (single pole single throw) P t(s switch fabricated in silicon gate C2MOS te c technology. le u The STG6384 is designed to operate from 1.65 to so rod 4.3 V, making this device ideal for portable applications. Ob te P The SELn inputs are provided to control the switch operation. The swi.
■ Ultra high off-isolation:
-80 dB (typ) at 1 Mhz
■ Ultra low power dissipation:
) ICC = 0.2 μA (max.) at TA = 85 °C t(s
■ RPEAK = 1.30 Ω max (TA = 25 °C) c at VCC = 4.3 V du
■ Wide operating voltage range: ro ) VCC (opr) = 1.65 to 4.3 V single supply P t(s
■ 4.3 V tolerant and 1.8 V compatible threshold te c on digital control input at VCC = 1.65 to 4.3 V le u
■ Typical bandwidth (-3 dB) at 65 MHz on Sn d channel so ro
■ Latch-up performance exceeds 100 mA per b P JESD 78, Class II - O te
■ ESD performance exceeds JESD22 ) le 2000-V Human body model (A114-A) ct(s bso Description du - O The.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STG60H65FBD7 |
STMicroelectronics |
IGBT | |
2 | STG6684 |
STMicroelectronics |
High isolation dual SPST analog switch | |
3 | STG1 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STG1218 |
STMicroelectronics |
a quad channel analog switch | |
5 | STG15M120F3D7 |
STMicroelectronics |
IGBT | |
6 | STG15M120F3D8 |
STMicroelectronics |
IGBT | |
7 | STG200G65FD8AG |
STMicroelectronics |
IGBT | |
8 | STG200M65F2D8AG |
STMicroelectronics |
IGBT | |
9 | STG2017 |
SamHop Microelectronics |
Dual N-Channel FET | |
10 | STG2454 |
SamHop Microelectronics |
Dual N-Channel FET | |
11 | STG2507 |
SamHop Microelectronics |
Dual P-Channel FET | |
12 | STG3155 |
ST Microelectronics |
Low voltage 0.5 Ohm Max single SPDT switch |