STFW3N170 - STMicroelectronics

STFW3N170 N-CHANNEL POWER MOSFET

This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Order code STFW3N170 Table 1: Device summary Marking Package 3N170 TO-3PF Packing Tube September 2015 DocID023985 R.

Features

Order code VDS RDS(on) max. ID PTOT STFW3N170 1700 V 13 Ω 2.6 A 63 W
 Intrinsic capacitances and Qg minimized
 TO-3PF for higher creepage between leads
 High speed switching
 100% avalanche tested Applications
 Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Order code STFW3N170 Table 1: Device summary Marking Package 3N170 TO-3PF Packing Tube September 2.